Why does wurtzite form in nanowires of III-V zinc blende semiconductors?

نویسندگان

  • Frank Glas
  • Jean-Christophe Harmand
  • Gilles Patriarche
چکیده

We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface energies, wurtzite nucleation is favored at high liquid supersaturation. This explains our systematic observation of zinc blende during early growth of gold-catalyzed GaAs nanowires.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase.

Some critical aspects of the anisotropic absorption and emission properties of quasi one-dimensional structures are reviewed in the context of III-V compound semiconductor nanowires. The unique optical and electronic properties of III-V nanowires stem from the combination of dielectric effects due to their large aspect ratio, and their specific crystallographic structure which can differ signif...

متن کامل

Nanowire-Induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate

2009 WILEY-VCH Verlag Gmb Synthesis of materials with a desired crystal structure is a major challenge in materials engineering. Single-crystal thin films grown by epitaxy typically adopt the same crystal structure as that of their substrates. Here, we report on the observation of a wurtzite InAs thin-film structure on a zinc-blende InAs substrate. Electron-backscatter diffraction (EBSD) and tr...

متن کامل

Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.

Self-catalyzed growth of GaAs nanowires are widely ascribed to the vapor-liquid-solid (VLS) mechanism due to the presence of Ga particles at the nanowire tips. Here we report synthesis of self-catalyzed GaAs nanowires by molecular-beam epitaxy covering a large growth parameter space. By carefully controlling the Ga flux and its ratio with the As flux, GaAs nanowires without Ga particles and exh...

متن کامل

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...

متن کامل

Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires.

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 99 14  شماره 

صفحات  -

تاریخ انتشار 2007